丝印：020N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：267.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：020NE7N；Package：PG-TO263-3；3Power-Transistor

Features Optimized technology for synchronous rectification Ideal for high frequency switching and DC/DC converters Excellent gate charge X R pon Product (FOM) Very low on-resistance Rosen) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified

文件：535.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：020N10LF；Package：PG-TO263-3；OptiMOSTM 5 Linear FET, 100 V

文件：1.01779 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

文件：280.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

OptiMOS™ Power-Transistor

• Optimized for high performance SMPS, e.g. sync. rec.\n• Superior thermal resistance\n• Qualified according to JEDEC1) for target applications\n• Halogen-free according to IEC61249-2-21;

Infineon

英飞凌