OptiMOS™ Power-Transistor

• Optimized for high performance SMPS, e.g. sync. rec.\n• Superior thermal resistance\n• Qualified according to JEDEC1) for target applications\n• Halogen-free according to IEC61249-2-21;

Infineon

英飞凌

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes 页数：12 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=313A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：331.95 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤2.0mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件：337.77 Kbytes 页数：2 Pages

ISC

无锡固电