丝印：0136；Package：VSON；AMC0136 Precision, ±1V Input, Functionally Isolated, Delta-Sigma Modulator With External Clock

1 Features • Linear input voltage range: ±1V • High input impedance: 1GΩ (typical) • Supply voltage range: – High-side (AVDD): 3.0V to 5.5V – Low-side (DVDD): 2.7V to 5.5V • Low DC errors: – Offset error: ±0.9mV (maximum) – Offset drift: 8.5μV/°C (maximum) – Gain error: ±0.25% (maximu

文件：1.45671 Mbytes 页数：34 Pages

TI

德州仪器

丝印：013N06NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05965 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：013N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05586 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：013N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：989.65 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：013N08LF；Package：PG-HSOF-8；OptiMOSTM 5 Linear FET, 80 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：771.75 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：01304C6；Package：PG-TTFN-9-1；OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.4171 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：013N；Package：WDFNW6；MOSFET - Power, Single N-Channel 30 V, 13 m, 35 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：283.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：01341；PoE SERIES POWER TRANSFORMER

RoHS Compliant Operating temperature: -40℃ to +125℃ Storage temperature: -40℃ to +125℃

文件：473.64 Kbytes 页数：1 Pages

FPE

美信科技

丝印：01304L6；Package：PG-TSON-8-4；OptiMOSTM Power-MOSFET, 40 V

文件：1.41318 Mbytes 页数：13 Pages

INFINEON

英飞凌