丝印：005；Package：MSOP-8；200mW Stereo Power Amplifier with Shutdown

Description The FAN7005 is a dual, fully differential audio power amplifier delivering 200mW(typ.) of continuous power into an 8Ω load. When driving 200mW into an 8Ω load from a 5V power supply, the FAN7005 has less than 0.3 of THD+N over the entire audible frequency range. To reduce the power co

文件：495.86 Kbytes 页数：16 Pages

Fairchild

仙童半导体

丝印：0051101NXD；Package：HTQFP；14-Bit, 1/3/8 MSPS, DSP-COMPATIBLE ANALOG-TO-DIGITAL CONVERTERS WITH INTERNAL REFERENCE AND PGA

FEATURES 14-Bit Resolution 1, 3, and 8 MSPS Speed Grades Available Differential Nonlinearity (DNL) ±0.6 LSB Typ Integral Nonlinearity (INL) ±1.5 LSB Typ Internal Reference Differential Inputs Programmable Gain Amplifier μP-Compatible Parallel Interface Timing Compatible With TMS320C6000 D

文件：1.03967 Mbytes 页数：33 Pages

TI

德州仪器

丝印：0051101NXD；Package：HTQFP；14-Bit, 1/3/8 MSPS, DSP-COMPATIBLE ANALOG-TO-DIGITAL CONVERTERS WITH INTERNAL REFERENCE AND PGA

FEATURES 14-Bit Resolution 1, 3, and 8 MSPS Speed Grades Available Differential Nonlinearity (DNL) ±0.6 LSB Typ Integral Nonlinearity (INL) ±1.5 LSB Typ Internal Reference Differential Inputs Programmable Gain Amplifier μP-Compatible Parallel Interface Timing Compatible With TMS320C6000 D

文件：1.03967 Mbytes 页数：33 Pages

TI

德州仪器

丝印：00504N6；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.25133 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：00504NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.13957 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：005L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：153.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：005W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：153.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：005N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：326.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：005N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 4.8 m, 75 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.37 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：005N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 5.6 m, 71 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体