丝印：009N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 9 m, 58 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：343.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体