丝印：005；Package：MSOP-8；200mW Stereo Power Amplifier with Shutdown

Description The FAN7005 is a dual, fully differential audio power amplifier delivering 200mW(typ.) of continuous power into an 8Ω load. When driving 200mW into an 8Ω load from a 5V power supply, the FAN7005 has less than 0.3 of THD+N over the entire audible frequency range. To reduce the power co

文件：495.86 Kbytes 页数：16 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：00504N6；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.25133 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：00504NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.13957 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：005L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：153.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：005W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：153.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：005N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：326.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：005N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 4.8 m, 75 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.37 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：005N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 5.6 m, 71 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：005N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 5.3 m, 89 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：262.18 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：005A；Package：12LdDFN；4.5V to 18V Input, 5A High Efficiency Synchronous Buck Regulator

文件：1.25433 Mbytes 页数：23 Pages

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