NE4210M01规格书应用电路批发供应瑞萨-114ic电子网

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NE4210M01	文件：79.09 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210M01	文件：193.76 Kbytes Page：14 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210M01-T1	文件：79.09 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210M01-T1	文件：193.76 Kbytes Page：14 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210S01	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown	CEL California Eastern Laboratories	CEL
NE4210S01	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01-T1	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210S01-T1	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown	CEL California Eastern Laboratories	CEL
NE4210S01-T1	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01-T1B	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210S01-T1B	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown	CEL California Eastern Laboratories	CEL
NE4210S01-T1B	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：4-SMD 类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：HJ-FET 13DB S01	CEL California Eastern Laboratories	CEL
NE4210S01-T1B	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：4-SMD 类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：HJ-FET 13DB S01	CEL California Eastern Laboratories	CEL
4210	文件：245.29 Kbytes Page：7 Pages	SPDTUltraCMOS??RFSwitchDC-3000MHz ProductDescription ThePE4210UltraCMOS™RFSwitchisdesignedtocoverabroadrangeofapplicationsfromnearDCto3000MHz.Thissingle-supplyswitchintegrateson-boardCMOScontrollogicdrivenbyasimple,single-pinCMOSorTTLcompatiblecontrolinput.Usinganominal+3-voltpowersupp	Peregrine Peregrine Semiconductor	Peregrine
4210-CVU	文件：3.4507 Mbytes Page：45 Pages	4200A-SCSParameterAnalyzer	TEKTRONIXTektronix 泰克泰克科技(中国)有限公司	TEKTRONIX
4210-P	文件：109.24 Kbytes Page：1 Pages	NylonWireHarnessClamps	Heyco Heyco	Heyco
4210-SMU	文件：3.4507 Mbytes Page：45 Pages	4200A-SCSParameterAnalyzer	TEKTRONIXTektronix 泰克泰克科技(中国)有限公司	TEKTRONIX
ADF4210	文件：251.63 Kbytes Page：20 Pages	DualRF/IFPLLFrequencySynthesizers	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD

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详细参数

型号：
NE4210
制造商：
NEC
制造商全称：
NEC
功能描述：
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市维尔达电子有限公司	NE4210M01-T1	NEC	2023+	SOT-363	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市惊羽科技有限公司	NE4210M01-T1	NEC-日本电气	24+25+/26+27+	SOT-363	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市力通伟业半导体有限公司	NE4210S01	NEC	13+	SMT	54000	特价热销现货库存	询价
深圳市益百分电子有限公司	NE4210S01	NEC	SMT-86	10+	5000	原装现货价格有优势量多可发货	询价
深圳市特顺芯科技有限公司	NE4210S01				3000	公司存货	询价
深圳市佳鑫美电子科技有限公司	NE4210S01	NEC	22+	SO86	4897	绝对原装!现货热卖!	询价
深圳市博浩通科技有限公司	NE4210S01	NEC	23+	原厂原装	9960	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
上海专毅电子科技有限公司	NE4210S01	NEC	17+	SO86	12000	只做全新进口原装,现货库存	询价
上海意淼电子科技有限公司	NE4210S01	NEC	23+	SO86	12000	全新原装假一赔十	询价
中科航电(深圳)半导体技术有限公司	NE4210S01	CEL	19+	SMD	56800	只卖原装正品!价格超越代理!可开增值税发票!	询价

更多NE4210供应商更新时间2024-4-30 13:30:00

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