DESCRIPTION

NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE4210S01 is housed in a low cost plastic package which is available in tape and reel.

FEATURES

• SUPER LOW NOISE FIGURE: 0.50 dB TYP at f = 12 GHz

• HIGH ASSOCIATED GAIN: 13.0 dB TYP at f = 12 GHz

• GATE LENGTH: LG ≤ 0.20 µm

• GATE WIDTH: WG = 160 µm

NE4210S01-T1B属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。California Eastern Laboratories制造生产的NE4210S01-T1B晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。