NE4资料datasheet下载贸易商益升华Essentra-114ic电子网

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NE4	文件：100 bytes Page：1 Pages	包装：散装类别：电缆，电线 - 管理电缆支撑与紧固件描述：CBL CLAMP P-TYPE FASTENER	EssentraEssentra Components 益升华益升华科技股份有限公司	Essentra
NE416	文件：579.8 Kbytes Page：13 Pages	NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTIONANDAPPLICATIONS TheNE416seriesofNPNsilicontransistorsisoneofthemostversatileandwidelyusedonNECsmicrowavetransistors.Theseriesprovideseconomicalsolutionstoawiderangeofamplifierandoscillatorproblems.Lownoisefigures,highgainandhighcurrentcapabili	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210M01	文件：79.09 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210M01	文件：193.76 Kbytes Page：14 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210M01-T1	文件：79.09 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210M01-T1	文件：193.76 Kbytes Page：14 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210S01	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown	CEL California Eastern Laboratories	CEL
NE4210S01	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01-T1	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210S01-T1	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown	CEL California Eastern Laboratories	CEL
NE4210S01-T1	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4210S01-T1B	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE4210S01-T1B	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown	CEL California Eastern Laboratories	CEL
NE4210S01-T1B	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4211M01	文件：206.81 Kbytes Page：10 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES •Superlownoisefigure&associatedgain: NF=0.75TYP.,Ga=12dBTYP.@f=12GHz NF=0.4TYP.,Ga=16dBTYP.@f=4GHz •6-pinsuperminimoldpackage •Gatewidth:Wg=160mm	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE4211M01-T1	文件：206.81 Kbytes Page：10 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES •Superlownoisefigure&associatedgain: NF=0.75TYP.,Ga=12dBTYP.@f=12GHz NF=0.4TYP.,Ga=16dBTYP.@f=4GHz •6-pinsuperminimoldpackage •Gatewidth:Wg=160mm	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE42484A	文件：189 Kbytes Page：12 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE42484A-SL	文件：189 Kbytes Page：12 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE42484A-T1	文件：189 Kbytes Page：12 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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产品属性

产品编号：
NE4
制造商：
Essentra Components
类别：
电缆，电线 - 管理 > 电缆支撑与紧固件
系列：
Richco
包装：
散装
类型：
线夹，P 型
开口尺寸：
0.250"（6.35mm）
安装类型：
紧固件
材料：
铝
颜色：
黑色，银色
宽度：
0.375"（9.53mm）
面板孔尺寸：
0.204"（5.18mm）
材料厚度：
0.031"（0.80mm）
特性：
保护涂层
描述：
CBL CLAMP P-TYPE FASTENER

供应商	型号	品牌	批号	封装	库存	备注	价格
上海金庆电子技术有限公司	NE4	Richco	新		5953	全新原装货期两周	询价
上海市鑫鸿达电子	NE4	Richco	2022+		5949	全新原装货期两周	询价
深圳市易讯博科技有限公司	NE4	Essentra	22+	NA	3597	加我QQ或微信咨询更多详细信息,	询价
深圳市福安瓯科技有限公司	NE4211M01-T1	NEC	22+	SOT26	1560	强调现货,随时查询!	询价
深圳市益百分电子有限公司	NE4558N	PHI	88+	DIP8	283	全新原装进口自己库存优势	询价
深圳市正川电子有限公司	NE4210S01-T1	RENESAS	12+PB	SMT-86	9000	现货-ROHO	询价
深圳市毅创腾电子科技有限公司	NE4558	PHILIPS	23+	SO-8	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市勤思达科技有限公司	NE4558N	NXP	10+	DIP-8	7800	全新原装正品,现货销售	询价
深圳市深创辉科技有限公司	NE4558D	PHIL	1998		44	原装正品现货供应	询价
深圳市佳鑫美电子科技有限公司	NE4210S01	NEC	22+	SO86	4897	绝对原装!现货热卖!	询价

更多NE4供应商更新时间2024-5-16 16:06:00

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