ZXTD619MCTA中文资料美台半导体数据手册PDF规格书

Features and Benefits

• BVCEO > 50V

• IC = 4A Continuous Collector Current

• Low Saturation Voltage (100mV max @ 1A)

• RSAT = 68mΩ for Low Equivalent On Resistance

• hFE specified up to 6A for high current gain holds up

• Dual NPN saving footprint and component count

• Low profile 0.8mm high package for thin applications

• RθJA efficient, 40 lower than SOT26

• 6mm2 footprint, 50 smaller than TSOP6 and SOT26

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Applications

• DC – DC Converters

• MOSFET gate drivers

• Charging circuits

• Motor Control

• Power switches

• Portable applications