ZXTD4591E6中文资料美台半导体数据手册PDF规格书

特性 Features

NPN Transistor

• BVCEO > 60V

• IC = 1A Continuous Collector Current

• Low Saturation Voltage (500mV max @ 1A)

• hFE characterised up to 2A

• RSAT = 210mΩ @1A for a Low Equivalent On-Resistance

PNP Transistor

• BVCEO > -60V

• IC = -1A Continuous Collector Current

• Low Saturation Voltage (-600mV max @ -1A)

• hFE characterised up to 2A

RSAT = 355mΩ @1A for a Low Equivalent On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Applications

• MOSFET Gate Driver

• Low Power Motor Drive

• Low Power DC-DC Converters