丝印：ZXMN6A25；Package：SOT-223；60V N-Channel

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting

文件：610.68 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：ZXMN6A25；Package：SOT-223；60V N-Channel

Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Lead-Free Finish;  Halogen and Antimony Free.

文件：786.77 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：ZXMN6A25；Package：SOT-223；60V N-Channel

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting

文件：610.68 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：ZXMN6A25；Package：SOT-223；60V N-Channel

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting

文件：610.68 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：ZXMN6A25；Package：SOT-223；60V N-Channel

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting

文件：610.68 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：ZXMN6A25；Package：SOT-223；60V N-Channel

Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Lead-Free Finish;  Halogen and Antimony Free.

文件：786.77 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

60V SO8 N-channel enhancement mode MOSFET

Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low gate drive • SO8 package Applications • DC-DC Converters • P

文件：254.72 Kbytes 页数：8 Pages

Zetex

60V N-Channel

Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Lead-Free Finish;  Halogen and Antimony Free.

文件：786.77 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

60V DPAK N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low gate drive • DPAK

文件：802.79 Kbytes 页数：8 Pages

Zetex

60V DPAK N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low gate drive • DPAK

文件：813.7 Kbytes 页数：8 Pages

DIODES

美台半导体