| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PremiumTopEntryAccelerometer,ArmoredBraidedCable Features •PrecisionTopEntryAccelerometer •100mV/g±5 •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmoredCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25MountingStudsIncluded •Sealed | STi Subaru Tecnica International | STi | ||
PremiumTopEntryAccelerometer,Submersible Features •PrecisionTopEntryAccelerometer •100mV/g±5 •150°CMaxTemperatureRange •±80gDynamicRange •IntegralPURCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25MountingStudsIncluded •SealedtoIP68 | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureand3PinMS5015 Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±15and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •3PinMS5015Connector •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Mounting | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureandIntegralArmoredBraidedCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureandSubmersiblePURIntegralCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun | STi Subaru Tecnica International | STi | ||
SmallSignalTransistorPNP-LowNoiseAmplifierTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB738and2SB739 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
EvaluationBoardforADG788TripleSPDTSwitchinChipScalePackage | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
2.5ohm,1.8Vto5.5V,2.5V,-2.5VTriple/QuadSPDTSwitchesinChipScalePackages GENERALDESCRIPTION TheADG786andADG788arelowvoltage,CMOSdevicescomprisingthreeindependentlyselectableSPDT(singlepole,doublethrow)switchesandfourindependentlyselectableSPDTswitchesrespectively. Lowpowerconsumptionandoperatingsupplyrangeof1.8Vto5.5Vanddual±2 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | ZetexZetex Semiconductors 捷特科半导体 | Zetex | ||
SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | ZetexZetex Semiconductors 捷特科半导体 | Zetex | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | ZetexZetex Semiconductors 捷特科半导体 | Zetex | ||
SOT223PNPSILICONPLANARMEDIUM Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PNPSiliconPlanarMediumPowerHighGainTransistor Features ●Lowequivalenton-resistance;RCE(sat)93mÙat3A. ●Gainof300atIC=2AmpsandVerylowsaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony | DIODESDiodes Incorporated 达尔科技 | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZILOG |
DIP-48 |
8 |
询价 | ||||
2407+ |
QFN |
7750 |
原装现货!实单直说!特价! |
询价 | |||
KOTL(金龙机电) |
21+ |
NA |
46800 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
23+ |
N/A |
76800 |
一级代理放心采购 |
询价 | |||
SUPERWORL |
22+ |
SMD |
65000 |
原装现货样品可售 |
询价 | ||
SUPERWORL |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
SUPERWOR |
24+25+/26+27+ |
车规-被动器件 |
96800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
23+ |
SOT223 |
1224 |
全新原装现货 |
询价 | ||
ST |
2020+ |
SOT-223 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
SEMITEC石塚抑制 |
10000 |
全新原装现货 样品可售 |
询价 |
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- Z8002CPU
- Z80180
- Z80180
- Z80180
- Z8018006FEC
