YJM4269A

MOS场效应管;

4269

Nytye®MountingPlatforms

4269

CLEARTHRU-HOLESPACER

BD4269EFJ-C

AEC-Q100Qualifies

BD4269FJ-C

AEC-Q100Qualifies

CEM4269

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■40V,6.1A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-5.2A,RDS(ON)=43mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CEM4269

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 40V,6.1A,RDS(ON)=32mW@VGS=10V. RDS(ON)=46mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. -40V,-5.2A,RDS(ON)=43mW@VGS=10V. RDS(ON)=65mW@VGS=

CEM4269A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 40V,6.0A,RDS(ON)=34mW@VGS=10V. RDS(ON)=49mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. -40V,-5.2A,RDS(ON)=43mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V.

CEU4269

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=46mW@VGS=4.5V. -40V,-12A,RDS(ON)=45mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V. TO-252-4Lpackage. Leadfreeproductisacquir

CEU4269

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-12A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab