首页 >XYM30N20AJ>规格书列表
| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET30Amps,200Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,200VoltsN?묬hannelEnhancement?묺odeD2PAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,200Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220 Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,200Volts N−ChannelEnhancement−ModeTO−220 30AMPERES200VOLTS68m@VGS=10V(Typ) Features •Source−to−DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •Pb−FreePackageisAvail | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220 Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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