| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IDTXOLVPECLCrystalOscillator | IDT Integrated Device Technology, Inc. | IDT | ||
IDTXOLVPECLCrystalOscillator | IDT Integrated Device Technology, Inc. | IDT | ||
Crimpingmachinesandtools | JSTJST Mfg. Co., Ltd. JST集团日本圧着端子製造株式会社 | JST | ||
ceramicresonator | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
Super323횚SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *1APeakPulseCurrent *ExcellentHFECharacteristicsUpTo1A(pulsed) *LowSaturationVoltage *LowEquivalentOnResistance;RCE(sat) APPLICATIONS *BoostfunctionsinDC-DCconverters *Motordriverfunctions | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *1APeakPulseCurrent *ExcellentHFECharacteristicsUpTo1A(pulsed) *LowSaturationVoltage *LowEquivalentOnResistance;RCE(sat) APPLICATIONS *BoostfunctionsinDC-DCconverters *Motordriverfunctions | Zetex Zetex Semiconductors | Zetex | ||
DUAL40VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturationVoltage(-220mV@-1A) •RSAT=104mΩforLowEquivalentOnResistance •hFEspecifiedupto-3Aforhighgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile0.8mmhighpac | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUAL40VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturationVoltage(-220mV@-1A) •RSAT=104mΩforLowEquivalentOnResistance •hFEspecifiedupto-3Aforhighgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile0.8mmhighpac | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
40VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=104mΩforalowequivalentOn-Resistance •hFEspecifiedupto-3Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJAe | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
40VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=104mΩforalowequivalentOn-Resistance •hFEspecifiedupto-3Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJAe | DIODESDiodes Incorporated 美台半导体 | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TELEMECANIQUE |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
ABB |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
施耐德 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
TELEMECHANIQUE |
2450+ |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |
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