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BD237

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •PowerDissipation:PCM=1.25W,Ta=25°C •CollectorCurrent:IC=2A •ComplementtoBD234/236/238respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Epoxy

MCCMicro Commercial Components

美微科美微科半导体公司

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD237

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

BD237

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD237

iscSiliconNPNPowerTransistor

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD237

SiliconNPNtransistorinaTO-126PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features ComplementarypairwithBD238. Applications Mediumpowerlinearandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BD237

LowvoltageNPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD237

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BD237

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD237

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

BD237

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD237

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

ETC1List of Unclassifed Manufacturers

未分类制造商

BD237

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc

MotorolaMotorola, Inc

摩托罗拉

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD237

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD237

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

BD237

SiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD237

GERMANIOVETRANZISTORY

ETCList of Unclassifed Manufacturers

未分类制造商

BD237D

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedformediumpowerlinearandswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

BD237G

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    XQ-237-RS

  • 制造商:

    LAB FACILITY

  • 功能描述:

    HIGH PRESS T/PKT 150MM

供应商型号品牌批号封装库存备注价格
TI/德州仪器
22+
QFN
12000
只做原装正品现货 欢迎来电查询15919825718
询价
TI/德州仪器
QFN
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
TI/德州仪器
1535+
1000
询价
XILINX/赛灵思
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
XILINX
23+
BGA
4865
中国航天工业部战略合作伙伴行业领导者
询价
更多XQ-237-RS供应商 更新时间2024-5-22 16:56:00