TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for medium power linear and switching applications.

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DCCOM

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC Components

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Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

文件：68.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

文件：93.13 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

文件：492.4 Kbytes 页数：4 Pages

CDIL