丝印：BD237；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively

文件：38.83 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

文件：68.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

80V, NPN TRANSISTORS

DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage

文件：113.02 Kbytes 页数：3 Pages

UTC

友顺

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

文件：283.29 Kbytes 页数：3 Pages

MCC

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

文件：104.24 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

文件：180.88 Kbytes 页数：3 Pages

WEITRON

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

文件：492.4 Kbytes 页数：4 Pages

CDIL

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件：1.17188 Mbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

文件：130.06 Kbytes 页数：3 Pages

ISC

无锡固电