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XP3A

Electroplated Probe Pins for High Reliability

文件:1.63743 Mbytes 页数:10 Pages

OMRON

欧姆龙

XP3A010AM

DUAL N-CHANNEL ENHANCEMENT

Description XP3A010A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely pre

文件:209.78 Kbytes 页数:7 Pages

YAGEO

国巨

XP3A010AMT

DUAL N-CHANNEL ENHANCEMENT

Description XP3A010A series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for

文件:671.51 Kbytes 页数:7 Pages

YAGEO

国巨

XP3A010BMT

DUAL N-CHANNEL ENHANCEMENT

Description XP3A010B series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is spec

文件:777.15 Kbytes 页数:8 Pages

YAGEO

国巨

XP3A010MT

DUAL N-CHANNEL ENHANCEMENT

Description XP3A010 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for

文件:672.35 Kbytes 页数:7 Pages

YAGEO

国巨

XP3A020AJY

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件:346.29 Kbytes 页数:6 Pages

YAGEO

国巨

XP3A020AM

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件:848.4 Kbytes 页数:8 Pages

YAGEO

国巨

XP3A020AYT

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件:341.88 Kbytes 页数:6 Pages

YAGEO

国巨

XP3A020M

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an e

文件:209.65 Kbytes 页数:7 Pages

YAGEO

国巨

XP3A020Y

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an e

文件:203.69 Kbytes 页数:7 Pages

YAGEO

国巨

技术参数

  • TA=25°C时功耗 (W):

    2

  • 栅极阈值电压 (VGS(th)):

    3 V

  • 漏源电压 (Vds):

    30 VDS

  • 配置:

    Dual

  • 技术:

    N-Channel

  • 栅源电压 (VGS):

    20 VGS

  • 类别:

    XP3A010AM

  • 类型:

    Discrete Semiconductors

  • 应用:

    MOSFET

  • 封装:

    SO-8(M)

  • 产品类别:

    MOSFET

供应商型号品牌批号封装库存备注价格
Omron
2010+
N/A
84
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更多XP3A供应商 更新时间2026-7-27 10:21:00