Power MOSFET

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TOREX

特瑞仕

丝印：XP1F0S10A；Package：SOT8000A；NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 460 Amps ID(max) continuous current rating • Low Q

文件：396.75 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：XP1F0S10C；Package：CCPAK1212i；NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 460 Amps ID(max) continuous current rating • Low Q

文件：374.51 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：XP1F1S80A；Package：CCPAK1212；NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 385 A ID(max) continuous current rating • Low QG ×

文件：397.7 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：XP1F1S80C；Package：CCPAK1212i；NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 385 Amps ID(max) continuous current rating • Low QG

文件：375.42 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：XP1E2S80A；Package：CCPAK1212；N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliability

文件：405.61 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：XP1E2S80C；Package：CCPAK1212i；N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliabilit

文件：356.46 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：XP1F3S10A；Package：CCPAK1212；NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 355 Amps ID(max) continuous current rating • Low Q

文件：400.66 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：XP1E4S10A；Package：CCPAK1212；N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliabilit

文件：405.56 Kbytes 页数：13 Pages

NEXPERIA

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丝印：XP1E4S10C；Package：CCPAK1212i；N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliabili

文件：382.93 Kbytes 页数：13 Pages

NEXPERIA

安世