丝印：XP1E4S10C；Package：CCPAK1212i；N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliabili

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安世安世半导体(中国)有限公司

NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 355 Amps ID(max) continuous current rating • Low Q

文件：378.85 Kbytes 页数：13 Pages

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安世安世半导体(中国)有限公司

N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliabilit

文件：405.56 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Nexperia(安世)
SOT669

Nexperia(安世)

上传：深圳市金芯世纪电子有限公司

NEXPERIA/安世
SOT-669

NEXPERIA/安世

上传：美源芯科（深圳）电子科技有限公司