丝印：XP1E2S80C；Package：CCPAK1212i；N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliabilit

文件：356.46 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1

Nexperia

安世

N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

1. General description N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliability

文件：405.61 Kbytes 页数：13 Pages

NEXPERIA

安世

Nexperia(安世)
SOT669

Nexperia(安世)

上传：深圳市金芯世纪电子有限公司

NEXPERIA/安世
SOT-669

NEXPERIA/安世

上传：美源芯科（深圳）电子科技有限公司