IRF9310TRPBF

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-20A RDS(ON)

IRF9310TRPBF-TP

P-ChannelEnhancementModeMOSFET

Features RDS(ON)=5.2mQ@VGs=-10V RDS(ON)=9.5mQ@VGs=-4V SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

IRFH9310

RoHSCompliantContainingnoLead,noBromideandnoHalogen

IRFH9310

P-ChannelEnhancementModeMOSFET

Description TheIRFH9310usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-30VID=-90A RDS(ON)

IRFH9310PBF

RoHSCompliantContainingnoLead,noBromideandnoHalogen

IRFH9310PBF

ChargeandDischargeSwitchforNotebookPCBatteryApplication

IRFH9310TRPBF

ChargeandDischargeSwitchforNotebookPCBatteryApplication

IRFR9310

PowerMOSFET(Vdss=-400V,Rds(on)=7.0ohm,Id=-1.8A)

IRFR9310

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre

IRFR9310

PowerMOSFET