WSF07N20

N-Channel MOSFET uses advanced trench technology

CJP07N20

PowerFiledEffectTransistor

FEATURES ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature

ISPD07N20G

N-ChannelMOSFETTransistor

•DESCRITION •Idealforhigh-frequencyswitchingandsynchronousrectification •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPD07N20

SIPMOS횘PowerTransistorFeaturesNchannelEnhancementmodeAvalancherated

SPD07N20

SIPMOSPowerTransistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated

SPD07N20G

N-ChannelMOSFETTransistor

•DESCRITION •Idealforhigh-frequencyswitchingandsynchronousrectification •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPD07N20G

N-Channel200V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

SPD07N20G

SIPMOS횘PowerTransistorFeaturesNchannelEnhancementmodeAvalancherated

SPU07N20

SIPMOSPowerTransistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated

SPU07N20G

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications