Power Filed Effect Transistor

FEATURES ● Robust High Voltage Termination ● Avalanche Energy Specified ● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ● Diode is Characterized for Use in Bridge Circuits ● IDSS and VDS(on) Specified at Elevated Temperature

文件：220.32 Kbytes 页数：4 Pages

JIANGSU

长电科技

N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.6 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes 页数：10 Pages

Infineon

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

文件：120.09 Kbytes 页数：8 Pages

Infineon

英飞凌