N-Channel, 20V, 3.2A, Power MOSFET

The WNM2306 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2306 is Pb-free.

OmniVision

豪威集团

Surface Mount N-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS (ON) RDS

文件：171.85 Kbytes 页数：6 Pages

WEITRON

Surface Mount N-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS (ON) RDS

文件：171.85 Kbytes 页数：6 Pages

WEITRON

N-Channel Enhancement Mode Power MOSFET

文件：619.95 Kbytes 页数：6 Pages

WEITRON