Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

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VBSEMI

微碧半导体

55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS

PCS CDMA/TDMA 3V POWER AMPLIFIER

Product Description The RF2157 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

文件：192.16 Kbytes 页数：10 Pages

RFMD

威讯联合

2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES

DESCRIPTION The UVP-2057/2157 is 2.0 inch (50.80mm) height 5X7 dot matrix display. Single color display have the of choices of three bright colors-AlGaAs red/green/red orange. Multicolor display are applicable to two colors : green and red orange. All device have gray face and white dot. The

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UOT

东贝光电