Silicon N-Channel MOSFET

General Description Th is Power MOSFET is produced using Winsemi ’ s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficien

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WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

场效应管

Winsemi

稳先微电子

Silicon N-Channel MOSFET

General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency

文件：594.5 Kbytes 页数：7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

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ETCList of Unclassifed Manufacturers

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Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

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Littelfuse

力特

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

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FORMOSA

美丽微半导体