Silicon N-Channel MOSFET

General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency s

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WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

场效应管

Winsemi

稳先微电子

Supports 10/100 Base T X

Features Supports 10/100 Base T X High network performance : Up to 50Mbps Supports half/full duplex operation Supports auto negotiation and auto cross over detection IEEE 802.3/802.3u Compl iance O perates 3.3V with 5V I/O signal tolerance Supports network status indicator LEDs Includes Ha

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WIZNET

微知纳特

SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

文件：19.16 Kbytes 页数：2 Pages

ZETEX

SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

文件：19.16 Kbytes 页数：2 Pages

ZETEX