N-Channel MOSFET

WFD3N80DP 是一款N-沟道高压功率MOSFT，具有开关速度快，dv/dt 能力提升等优点，可广泛应用于LED电源，充电器，适配器，开关电源等应用。 • 800V, 3A\n• 100%雪崩测试\n• 开关速度快;

Winsemi

稳先微电子

2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer

文件：200.25 Kbytes 页数：6 Pages

UTC

友顺

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：210.29 Kbytes 页数：6 Pages

UTC

友顺

N-Channel Power MOSFET

文件：398.32 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体