超结MOSFET

Winsemi

稳先微电子

Silicon N-Channel MOSFET

General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficien

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WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

N-Channel MOSFET

Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 8.5nC (Typ.) □ BVDSS=600V,ID=2A □ RDS(on): 5 Ω(Max) @VG=10V □ 100 Avalanche Tested

文件：714.75 Kbytes 页数：7 Pages

WISDOM

600V N-Channel MOSFET

文件：1.55693 Mbytes 页数：6 Pages

WISDOM