W968D6DAG中文资料虚拟静态随机存取内存(Pseudo SRAM)数据手册Winbond规格书

描述 Description

This is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

特性 Features

•Supports asynchronous and burst operations
• VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ
• Random access time: 70ns
• Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst
• Burst wrap or sequential
• Max clock rate: 133 MHz (tCLK = 7.5ns)
• tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz
• Low-power features: TCR, PAR, DPD
• Page mode READ access:Sixteen-word page size
• Interpage READ access: 70ns, Intrapage READ access: 20ns
• Package:54VFBGA