W949D6KBHX中文资料低功耗双存取同步动态随机存取内存(Low Power DDR SDRAM)数据手册Winbond规格书

描述 Description

This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits

特性 Features

•Note: K-Die keeps supporting but D-Die is suggested for the new design
• Powerer supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
• Data width: x16
• Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
• Standard Self Refresh Mode
• PASR、ATCSR、Power Down Mode、DPD
• Programmable output buffer driver strength
• Four internal banks for concurrent operation
• CAS Latency: 2 and 3
• Burst Length: 2、4 、8 and 16
• Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
• Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
• Package:60VFBGA