2N7001TQDCKRQ1

Marking：W9；Package：SC70；2N7001T-Q1 Single-bit Dual-supply Buffered Voltage Signal Converter

1Features •Upanddowntranslationacross1.65Vto3.6V •AEC-Q100automotivequalified •Operatingtemperaturegrade1:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCIsolationFeature –I

AD-BZT52C5V6S

Marking：W9；Package：SOD-323；Plastic-Encapsulated Diode

FEATURES ⚫Planardieconstruction ⚫200mWpowerdissipationonceramicPBC ⚫Generalpurpose,mediumcurrent ⚫AEC-Q101qualified

BALFLB-WL-09D3

Marking：W9；Package：CSPG；50 Ω nominal input / conjugate match balun to QFN-2L STM32WL in high power mode, 470-510 MHz with integrated harmonic filter

Features •QFNSTM32WLsub-GHzwirelessmicrocontrollersimpedancematchedbalun andTxharmonicsfilter •OptimizedforQFNSTM32WLsub-GHzwirelessmicrocontrollersinhigh powermodeanddedicatedto2-layersPCB •50Ωnominalinput/conjugatematchedbaluntoQFNSTM32WL •50Ωnominal

BD45412G

Marking：W9；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46411

Marking：W9；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46411G

Marking：W9；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-incoun

BZT52B5V1

Marking：W9；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.4V–51VNominalZenerVoltage 2StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52B5V1S

Marking：W9；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–75VNominalZenerVoltage 2StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52C5V1

Marking：W9；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52-C5V1

Marking：W9；Package：SOD-123；SURFACE MOUNT SILICON ZENER DIODES

FEATURES •PlanarDieconstruction •410mWPowerDissipation •ZenerVoltagesfrom2.4~75V •IdeallySuitedforAutomatedAssemblyProcesses •IncompliancewithEURoHS2002/95/ECdirectives