丝印：W26；Package：SOT-23；Single P-Channel, -20V, -3.2A, Power MOSFET

文件：859.2 Kbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：W26；Package：SOT-23；Single P-Channel, -20V, -3.2A, Power MOSFET

文件：859.2 Kbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

128K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26020A is a high-speed, low-power CMOS static RAM organized as 131,072 x 16 bits that operates on a single 5-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. FEATURES ● High speed access time: 20/25 nS (max.) ● Low power c

文件：126.08 Kbytes 页数：10 Pages

WINBOND

华邦电子

128K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26020A is a high-speed, low-power CMOS static RAM organized as 131,072 x 16 bits that operates on a single 5-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. FEATURES ● High speed access time: 20/25 nS (max.) ● Low power c

文件：126.08 Kbytes 页数：10 Pages

WINBOND

华邦电子

128K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26020A is a high-speed, low-power CMOS static RAM organized as 131,072 x 16 bits that operates on a single 5-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. FEATURES ● High speed access time: 20/25 nS (max.) ● Low power c

文件：126.08 Kbytes 页数：10 Pages

WINBOND

华邦电子

128K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26020A is a high-speed, low-power CMOS static RAM organized as 131,072 x 16 bits that operates on a single 5-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. FEATURES ● High speed access time: 20/25 nS (max.) ● Low power c

文件：126.08 Kbytes 页数：10 Pages

WINBOND

华邦电子

128K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26020A is a high-speed, low-power CMOS static RAM organized as 131,072 x 16 bits that operates on a single 5-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. FEATURES ● High speed access time: 20/25 nS (max.) ● Low power c

文件：126.08 Kbytes 页数：10 Pages

WINBOND

华邦电子

A DeviceNet Unit for the CS Series That Boasts Industry-leading Performance and Functions

Features • Allows control of up to 32,000 points (2,000 words) per master, and ensures a high degree of simultaneity between data. • Can be used as both a master and a slave at the same time. • Equipped with settings and monitor functions aimed at improving both design and startup efficiency. A

文件：686.05 Kbytes 页数：6 Pages

OMRON

欧姆龙

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子