64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K X 16 High Speed CMOS Static RAM

GENERAL DESCRIPTION The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology. The W26L010A has an active low chip select, separate upper and l

文件：131.81 Kbytes 页数：10 Pages

WINBOND

华邦电子

64K x 16 HIGH-SPEED CMOS STATIC RAM

Winbond

华邦电子

64K x 16 HIGH-SPEED CMOS STATIC RAM

GENERAL DESCRIPTION\nThe W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbonds high performance CMOS technology.\nThe W26L010A has an active low chip select, separate upper and low ● High speed access time: 10/12 nS (max.)\n● Low power consumption:\n   - Active: 530 mW (max.)\n● Single +3.3V power supply\n● Fully static operation\n   - No clock or refreshing\n● All inputs and outputs directly TTL compatible\n● Three-state outputs\n● Data byte control\n   - LB (I/O1-I/O8), UB (;

Winbond

华邦电子

64K X 16 High Speed CMOS Static RAM

Winbond

华邦电子