W25Q256JV

串口式 NOR 型闪存; •Single/Dual/Quad SPI operations \n• 3 or 4-Byte Addressing Modes \n• Uniform 4KB erasable sectors & 32KB/64KB erasable blocks \n• 131,072 pages (256 bytes), page program in 0.7mS (typ.) \n• Continuous Read with 8/16/32/64 Byte Wrap \n• Clock operation up to 133MHz (266/532MHz equivalent with Dual/Quad SPI) \n• 2.7 to 3.6V power supply \n• \n• Package:16-pin SOIC 300-mil, 24-ball TFBGA 8x6-mm (6x4 Ball Array),8-pad WSON 8x6-mm, 24-ball TFBGA 8x6-mm (5x5 Ball Array);

256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI\n

W25Q256JV_DTR

串口式 NOR 型闪存; SPI/QPI/DTR (Double Transfer Rate) Read\n• 3 or 4-Byte Addressing Modes\n• UID & OTP Feature\n• Individual Block/Sector Write Protection\n• Volatile & Non-Volatile Status Registers\n•;

256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI\n

W25Q256JV-DTR

串口式 NOR 型闪存; •Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations \n• 3 or 4-Byte Addressing Modes \n• Uniform 4KB erasable sectors & 32KB/64KB erasable blocks \n• 131,072 pages (256 bytes), page program in 0.7mS (typ.) \n• Continuous Read with 8/16/32/64 Byte Wrap \n• Clock operation up to 133MHz (266/532MHz equivalent with Dual/Quad I/O Read) \n• 2.7 to 3.6V power supply \n• \n• Package:16-pin SOIC 300-mil, 24-ball TFBGA 8x6-mm (6x4 Ball Array),8-pad WSON 8x6-mm, 24-ball TFBGA 8x6-mm (5x5 Ball Array);

256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI\n

W25Q256JVBIQ

3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JVCIQ

3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JVEIQ

3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JVEIQ-TR

3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JVFIQ

3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JVBAQ

Package：24-TBGA；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH

Winbond Electronics

W25Q256JVBIM

Package：24-TBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLSH 256MBIT SPI/QUAD 24TFBGA

Winbond Electronics