QspiNAND Flash

2Gb Serial NAND Flash Memory with uniform 2KB+128B page size and set Buffer Read Mode as default Page Read Time with ECC Enable: 50us Page Program Time: 250us(typ.) Block Erase Time: 2ms(typ.) Support OTP Memory Area;

Winbond

华邦电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 25A, RDS(ON) = 23mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 33mW @VGS = 2.5V. RoHS compliant.

文件：535.65 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 25A, RDS(ON) = 23mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 33mW @VGS = 2.5V. RoHS compliant.

文件：535.65 Kbytes 页数：4 Pages

CET-MOS

华瑞

Discrete Diodes

文件：75.58 Kbytes 页数：1 Pages

SIRECTIFIER

矽莱克电子