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H15NB50FI

N-CHANNELENHANCEMENTMODEMESHOVERLAYPOWERMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STH15NB50

N-CHANNELENHANCEMENTMODEMESHOVERLAYPOWERMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STH15NB50

N-CHANNEL500V-0.33ohm-14.6A-T0-247/ISOWATT218PowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STH15NB50FI

N-CHANNEL500V-0.33ohm-14.6A-T0-247/ISOWATT218PowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STH15NB50FI

N-CHANNELENHANCEMENTMODEMESHOVERLAYPOWERMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW15NB50

N-CHANNEL500V-0.33ohm-14.6A-T0-247/ISOWATT218PowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW15NB50FI

N-CHANNEL500V-0.33ohm-14.6A-T0-247/ISOWATT218PowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

W15NB50

N-CHANNEL500V-0.33ohm-14.6A-T0-247/ISOWATT218PowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST/意法
23+
TO-247
90000
只做原厂渠道价格优势可提供技术支持
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
ST
原厂原封
396379
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
22+
原厂原封
16900
支持样品 原装现货 提供技术支持!
询价
ST
23+
TO-247
3000
全新原装
询价
ST/进口原
21+
TO-247
6000
绝对原裝现货
询价
S
23+
TO-247
10000
公司只做原装正品
询价
ST/意法
23+
TO-247
50000
全新原装正品现货,支持订货
询价
S
TO-247
22+
6000
十年配单,只做原装
询价
-
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多W15NB50其他被动元件供应商 更新时间2024-5-31 17:18:00