N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：110.37 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

ST

意法半导体

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：110.37 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：110.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：110.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体