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STH15NB50FI中文资料PDF规格书
STH15NB50FI规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号:
STH15NB50FI
- 功能描述:
MOSFET N-CH500V 10.5A ISOWATT218
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
PowerMESH™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMRC |
23+ |
NA/ |
921 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
23+ |
TO-3PF |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST |
17+ |
TO-3P |
2500 |
原装现货热卖 |
询价 | ||
ST |
23+ |
TO-3PF |
5000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
TO-3PF |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
24+ |
TO3PF |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ST/意法 |
22+ |
N |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
ST |
23+ |
TO-3PF |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
22+ |
TO-3PF |
99881 |
询价 | |||
ST |
22+ |
ISOWATT2183 |
9000 |
原厂渠道,现货配单 |
询价 |