H15NB50FI中文资料意法半导体数据手册PDF规格书
H15NB50FI规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号:
H15NB50FI
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NYBOXING(尼博星) |
23+ |
插件 |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
JST |
21+ |
标准封装 |
78 |
保证原装正品,需要请联系张小姐13544103396 |
询价 | ||
INFINEON |
2023+ |
TO-247 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
JST/日压 |
2420+ |
/ |
483708 |
一级代理,原装正品! |
询价 | ||
JST |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
询价 | |||
JST |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST |
22+ |
TO-3P |
16900 |
支持样品 原装现货 提供技术支持! |
询价 |