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VT200

Photoconductive Cells and Analog Optoisolators (Vactrols)

Custom and Semi-Custom Devices Upon request, and where sufficient quantities are involved, PerkinElmer Optoelectronics will test standard parts to your unique set of specifications. The advantage of testing parts under actual operating conditions is predictable performance in the application. Pe

文件:1.24081 Mbytes 页数:76 Pages

PerkinElmer

VT2045BP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:109.22 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045BP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS    For use in

文件:114.62 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045BP_V01

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:109.22 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045BP-M3/4W

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS    For use in

文件:114.62 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045BP-M3SLASH4W

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS    For use in

文件:114.62 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:142.44 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

文件:124.86 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045C_V01

Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:142.44 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT2045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

文件:136.68 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    VT2

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
22+
TO220
20000
只做原装
询价
VISHAY
25+
TO220AB
100
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHY
2012+
TO220
1300
普通
询价
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY
23+
TO220AB
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO220AB
50000
全新原装正品现货,支持订货
询价
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
询价
VISHAY/威世
23+
TO220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
1036+
TO220AB
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
VISHAY
23+
TO220
2550
原厂原装正品
询价
更多VT2供应商 更新时间2025-12-18 15:01:00