Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

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VishayVishay Siliconix

威世威世科技公司

Power Schottky rectifier

Features  Very small conduction losses  Negligible switching losses  Extremely fast switching  Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine  Avalanche rated  ECOPACK®2 compliant component for D²PAK on demand

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STMICROELECTRONICS

意法半导体

BGA

VOLTERR

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NA

ADI

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NA

ADI

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