MOSFET

N沟道增强型功率MOSFET采用VitoMOSⅡ技术制造，具有更低的导通损耗和开关损耗以及优越的开关性能。。该产品可广泛应用于快充等领域。 1.VitoMOSⅡ 技术\n2.极低的Qg\n3.更低的导通损耗和开关损耗\n4.100%雪崩测试\n5.无铅电镀；符合 RoHS 标准;

Vergiga

威兆半导体

N-Channel MOSFET uses advanced trench technology

文件：1.55457 Mbytes 页数：5 Pages

DOINGTER

杜因特

OptiMOSTM5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection

文件：906.71 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOSTM Power-Transistor, 60 V

文件：1.02236 Mbytes 页数：11 Pages

Infineon

英飞凌

MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.75 Kbytes 页数：6 Pages

ONSEMI

安森美半导体