P-Channel Enhancement-Mode Vertical DMOS FET

General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped

文件：759.88 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：46.74 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

文件：659.86 Kbytes 页数：5 Pages

SUTEX

MOSFET, P-Channel Enhancement-Mode, -60V, 8.0 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

Microchip

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P-Channel Enhancement-Mode

P-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：90.22 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode

P-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：90.22 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：46.74 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped

文件：759.88 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

P-Channel Enhancement-Mode

P-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：90.22 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode

P-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：90.22 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司