VP0106中文资料MOSFET, P-Channel Enhancement-Mode, -60V, 8.0 Ohm数据手册Microchip规格书
VP0106规格书详情
描述 Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
特性 Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
技术参数
- 制造商编号
：VP0106
- 生产厂家
：Microchip
- BVdss min (V)
：-60
- Rds (on) max (Ohms)
：8
- Vgs(th) max (V)
：-3.5
- CISSmax (pF)
：60
- Packages
：3\\TO-92
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SI |
24+ |
4000 |
现货供应 |
询价 | |||
SILICON |
专业铁帽 |
CAN3 |
5 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
Microchip |
22+ |
TO2263 TO923 (TO226AA) |
9000 |
原厂渠道,现货配单 |
询价 | ||
SIL |
23+ |
CAN3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
SI |
25+ |
DIP14 |
7 |
全新原装正品支持含税 |
询价 | ||
SI |
18+ |
TO-92 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
SUPERTEX |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SI |
9329 |
1050 |
公司优势库存 热卖中!! |
询价 | |||
Microchip Technology |
2022+ |
TO-226-3,TO-92-3 标准主体(!- |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
1000个/袋一级代理专营品牌!原装正品,优势现货,长 |
询价 |
