OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

文件：309.85 Kbytes 页数：19 Pages

STMICROELECTRONICS

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OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

文件：407.06 Kbytes 页数：24 Pages

STMICROELECTRONICS

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FULLY AUTOPROTECTED POWER MOSFET

文件：310.77 Kbytes 页数：19 Pages

STMICROELECTRONICS

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MOSFET POWER 40V 30A PWRSO10

ST

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Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

文件：407.06 Kbytes 页数：24 Pages

STMICROELECTRONICS

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OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

文件：561.42 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

文件：561.42 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed inSTMicroelectronics®VIPower®M0-3 Technology, intended for replacementof standard Power MOSFETs from DC up to 25 kHz applications.\n Built-in thermal shutdown, linear current limitation and overvoltage clamp protect th • Linear current limitation\n• Thermal shutdown\n• Short circuit protection\n• Integrated clamp\n• Low current drawn from input pin• Diagnostic feedback through input pin\n• ESD protection\n• Direct access to the gate of the Power MOSFET (analog driving)\n• Compatible with standard Power MOSFET;

ST

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MOSFET POWER 40V 30A PWRSO10

ST

意法半导体