OMNIFET II全自动保护功率MOSFET

The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envi • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible with standard Power M;

ST

意法半导体

Package：TO-261-4，TO-261AA；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

STMICROELECTRONICS

意法半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

STMICROELECTRONICS

意法半导体

Package：TO-261-4，TO-261AA；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

STMICROELECTRONICS

意法半导体